Hemal Electronics

Hemal Electronics

Grant Road, Mumbai, Maharashtra

IGBT Diode

Our product range includes a wide range of transistor fgw40120hd.

Transistor FGW40120HD


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Approx. Rs 200 / PieceGet Latest Price

Product Details:

Minimum Order Quantity100 Piece
Current1.5 A
Power20 W
Packaging typeBox
Frequency4 MHz

Type Designator: FGW40N120HD(40G120HD)

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 340

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.8

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 60

Maximum Collector Capacity (Cc), pF: 130

Package: TO247

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